Researcher Directory

Resta Agung Susilo is a researcher at the Research Center for Quantum Physics, BRIN. He obtained his PhD from the University of New South Wales, Australia in 2016 with research focused on the magnetism of rare-earth-based intermetallic compounds. After that, he shifted his research to study the properties of materials under extreme conditions (low temperature, high pressure, high magnetic field). Currently, Resta focuses his interest on the properties of topological materials and quantum materials at extremes, intending to harness new physical or quantum states that are inaccessible at ambient conditions for future technological applications. He is experienced in transport and optical measurement techniques at high pressures and has extensive experience with synchrotron X-ray experiments (both scattering and spectroscopy) under extreme conditions at large-scale facilities such as SSRF (Shanghai, China), SPring-8 (Japan), ALS (Berkeley, USA) and APS (Argonne, USA).
- Research Keywords: extreme conditions, high pressure, magnetism, topological material, low dimensional material, superconductivity
- Contact: resta.a.s(at)gmail.com
- Metrics: Google Scholar, Scopus
- Ph.D. | School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Australia.
- M. Sc. | Department of Physics and Astronomy, University of Manitoba, Canada.
- S.Si./B. Sc. | Department of Physics, Universitas Indonesia, Depok, Indonesia.
- 2024–present, Researcher, BRIN Research Center for Quantum Physics, Indonesia.
- 2021–2025, Postdoctoral fellow, Department of Physics, Pohang University of Science and Technology (POSTECH), Korea.
- 2017–2020, Postdoctoral Researcher, Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China.
- 2019, Visiting scientist, Brookhaven National Laboratory, USA.
- Shihui Zhang, Resta A. Susilo, Shun Wan, Wen Deng, Bin Chen, Chunxiao Gao, “Origin of the decompression driven superconductivity enhancement in SnSe2”, J. Mater. Chem. C. 11, 12254-12260 (2023).
- Jiajia Feng, Cong Li, Wen Deng, Bencheng Lin, Wenhui Liu, Resta A. Susilo, Hongliang Dong, Zhiqiang Chen, Nan Zhou, Xiaolei Yi, Xiangzhuo Xing, Feng Ke, Zhenxian Liu, Hongwei Sheng, Zhixiang Shi, Bin Chen, “Superconductivity Induced by Lifshitz Transition in Pristine SnS2 under High Pressure”, J. Phys. Chem. Lett. 13 (40), 9404-9410 (2022).
- Yu Liu, Resta A. Susilo, Yongbin Lee, AM Milinda Abeykoon, Xiao Tong, Zhixiang Hu, Eli Stavitski, Klaus Attenkofer, Liqin Ke, Bin Chen, Cedomir Petrovic, “Short-Range Crystalline Order-Tuned Conductivity in Cr2Si2Te6 van der Waals Magnetic Crystals”, ACS Nano 16, 13134-13143 (2022).
- Resta A. Susilo, Wen Deng, Jiajia Feng, Aifeng Wang, Naomi Kawamura, Naoki Ishimatsu, Saori Kawaguchi, Mingzhi Yuan, He Li, Weijun Ren, Takeshi Nakagawa, Cedomir Petrovic, Bin Chen, “Impacts of pressure to the structural, electronic and magnetic properties of Dirac semimetal EuMnBi2”, Phys. Rev. Research 3, 043028 (2021).
- Mingzhi Yuan, Resta A. Susilo, Shujia Li, Jiajia Feng, Vicente Benavides, Jian Chen, Alexander V Soldatov, Bin Chen, “Fragmentation and structural transitions of few-layer graphene under high shear stress”, Appl. Phys. Lett. 118, 213101 (2021).
- Resta A. Susilo, Bo Gyu Jang, Jiajia Feng, Qianheng Du, Zhipeng Yan, Mingzhi Yuan, Hongliang Dong, Cedomir Petrovic, Ji Hoon Shim, Duckyoung Kim and Bin Chen, “Band gap crossover and insulator-metal transition in the compressed layered CrPS4”, npj Quantum Mater. 5, 58 (2020).
- Jiajia Feng, Resta A. Susilo, Bencheng Lin, Wen Deng, Yanju Wang, Bin Li, Kai Jiang, Zhiqiang Chen, Xiangzhuo Xing, Zhixiang Shi, Chunlei Wang, and Bin Chen, “Achieving room-temperature charge density wave in transition metal dichalcogenide 1T-VSe2”, Adv. Electron. Mater. 6, 1901427 (2020).
- Resta A. Susilo, X. Rocquefelte, J. M. Cadogan, E. Bruyer, W. Lafargue-Dit-Hauret, W. D. Hutchison, M. Avdeev. D. H. Ryan, T. Namiki and S. J. Campbell, “Magnetic structures of R2Fe2Si2C intermetallic compounds: Evolution to Er2Fe2Si2C and Tm2Fe2Si2C”, Phys. Rev. B. 99, 184426 (2019).